Effect of electric field on diffusion in disordered materials. II. Two- and three-dimensional hopping transport

被引：37

作者：

Nenashev, A. V. ^{[1
,2
]}

Jansson, F. ^{[3
,4
,5
]}

Baranovskii, S. D. ^{[6
,7
]}

Osterbacka, R. ^{[4
,5
]}

Dvurechenskii, A. V. ^{[1
,2
]}

Gebhard, F. ^{[6
,7
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

[2] Novosibirsk State Univ, Novosibirsk 630090, Russia

[3] Abo Akad Univ, Grad Sch Mat Res, SF-20500 Turku, Finland

[4] Abo Akad Univ, Dept Phys, SF-20500 Turku, Finland

[5] Abo Akad Univ, Ctr Funct Mat, SF-20500 Turku, Finland

[6] Univ Marburg, Dept Phys, D-35032 Marburg, Germany

[7] Univ Marburg, Ctr Mat Sci, D-35032 Marburg, Germany

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 11期

基金：

芬兰科学院;

关键词：

MOLECULARLY DOPED POLYMERS; CHARGE-CARRIERS; EINSTEIN LAW; DRIFT; DEVIATION;

D O I：

10.1103/PhysRevB.81.115204

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the previous paper [A. V. Nenashev, F. Jansson, S. D. Baranovskii, R. Oumlsterbacka, A. V. Dvurechenskii, and F. Gebhard, Phys Rev. B 81, 115203 (2010)] an analytical theory confirmed by numerical simulations has been developed for the field-dependent hopping diffusion coefficient D(F) in one-dimensional systems with Gaussian disorder. The main result of that paper is the linear, nonanalytic field dependence of the diffusion coefficient at low electric fields. In the current paper, an analytical theory is developed for the field-dependent diffusion coefficient in three- and two-dimensional Gaussian-disordered systems in the hopping transport regime. The theory predicts a smooth parabolic field dependence for the diffusion coefficient at low fields. The result is supported by Monte Carlo computer simulations. In spite of the smooth field dependences for the mobility and for the longitudinal diffusivity, the traditional Einstein form of the relation between these transport coefficients is shown to be violated even at very low electric fields.

引用

页数：11

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