High-performance quantum ring detector for the 1-3 terahertz range

被引：136

作者：

Bhowmick, S. ^{[1
]}

Huang, G. ^{[1
]}

Guo, W. ^{[1
]}

Lee, C. S. ^{[1
]}

Bhattacharya, P. ^{[1
]}

Ariyawansa, G. ^{[2
]}

Perera, A. G. U. ^{[2
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 23期

关键词：

III-V semiconductors - Semiconductor quantum dots - Indium arsenide - Nanorings;

D O I：

10.1063/1.3447364

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular beam epitaxy of InAs/GaAs quantum dots and their subsequent transformation to quantum rings by postepitaxy thermal annealing have been investigated. Photoconductive detectors with multiple quantum ring layers in the active region exhibit dark current density similar to 10(-8) A/cm(2) at a bias of 2 V at 4.2 K. The rings have a single bound state, and emission of photoexcited carriers gives rise to a spectral response peaking at 1.82 THz (165 mu m) at 5.2 K. Peak responsivity of 25 A/W, specific detectivity, D*, of 1 x 10(16) Jones and a total quantum efficiency of 19% are measured with 1 V bias at 5.2 K. At 10 K and 1 V, D similar to 3 x 10(15) Jones is measured. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3447364]

引用

页数：3

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