Quantum-dot infrared photodetectors

被引：90

作者：

Campbell, Joe C. ^{[1
]}

Madhukar, Anupam

机构：

[1] Univ Virginia, Dept Elect & Comp Engn, Charlottesville, VA 22904 USA

[2] Univ So Calif, Dept Mat Sci & Phys, Nanostruct Mat & Device Lab, Los Angeles, CA 90089 USA

来源：

PROCEEDINGS OF THE IEEE | 2007年 / 95卷 / 09期

关键词：

-AlGaAs; GaAs; infrared; InGaAs; photodetector; quantum dot; quantum-dot infrared photodetector (QDIP);

D O I：

10.1109/JPROC.2007.900967

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

I We present a study of a series of n-i-n InAS quantum-dot infrared photodetectors (QDIPs) with unintentionally doped active regions. Different quantum-dot capping layer materials (GaAs, InGaAs, and AIGaAs) are utilized to tune the operating wavelength and modify the QDIP performance. Normal-incidence operation with high detectivity in the mid (3-5 mu m) and long (8-12 mu m) wavelength regimes and the potential for multicolor operation is demonstrated.

引用

页码：1815 / 1827

页数：13

共 46 条

[1] STRAIN EFFECTS AND BAND OFFSETS IN GAAS/INGAAS STRAINED LAYERED QUANTUM STRUCTURES [J].

ARENT, DJ ;

DENEFFE, K ;

VANHOOF, C ;

DEBOECK, J ;

BORGHS, G .

JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) :1739-1747

[2]

BALLINGALL RA, 1990, PROC SPIE, V1320, P70, DOI 10.1117/12.22314

[3] Mid-infrared photoconductivity in InAs quantum dots [J].

Berryman, KW ;

Lyon, SA ;

Segev, M .

APPLIED PHYSICS LETTERS, 1997, 70 (14) :1861-1863

[4] High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity [J].

Chakrabarti, S ;

Stiff-Roberts, AD ;

Bhattacharya, P ;

Gunapala, S ;

Bandara, S ;

Rafol, SB ;

Kennerly, SW .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (05) :1361-1363

[5]

CHEN Y, 2002, INT J HEAT TECHNOLOG, V20, P3

[6] Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region [J].

Chen, ZH ;

Baklenov, O ;

Kim, ET ;

Mukhametzhanov, I ;

Tie, J ;

Madhukar, A ;

Ye, Z ;

Campbell, JC .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (08) :4558-4563

[7] Intraband-transition-induced dipoles in self-assembled InAs/GaAs(001) quantum dots [J].

Chen, ZH ;

Kim, ET ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 2002, 80 (15) :2770-2772

[8] Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots [J].

Chen, ZH ;

Kim, ET ;

Madhukar, A .

APPLIED PHYSICS LETTERS, 2002, 80 (14) :2490-2492

[9] Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dots [J].

Chu, L ;

Zrenner, A ;

Böhm, G ;

Abstreiter, G .

APPLIED PHYSICS LETTERS, 1999, 75 (23) :3599-3601

[10]

COSTARD E, 2006, P SPIE, V6361

← 1 2 3 4 5 →