A quantum ring terahertz detector with resonant tunnel barriers

被引：45

作者：

Huang, G. ^{[1
]}

Guo, W. ^{[1
]}

Bhattacharya, P. ^{[1
]}

Ariyawansa, G. ^{[2
]}

Perera, A. G. U. ^{[2
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

基金：

美国国家科学基金会;

关键词：

current density; dark conductivity; gallium arsenide; III-V semiconductors; indium compounds; resonant tunnelling; semiconductor quantum dots; terahertz wave detectors; DOT INFRARED PHOTODETECTOR;

D O I：

10.1063/1.3100407

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electronic properties of InAs/GaAs quantum rings and the characteristics of resonant tunnel intersubband terahertz detectors with quantum ring active regions have been studied. The electronic states of the quantum rings have been calculated and measured by the capacitance-voltage technique. The detectors exhibit extremely low dark current density values similar to 5x10(-5), 4.7x10(-2), and 3.5x10(-1) A/cm(2) under a -1 V bias at 4.2, 80, and 300 K, respectively. Three prominent response peaks are observed at similar to 6.5, 10, and 12.5 THz up to T=120 K. At 80 K, the responsivity of the peaks varies from 0.07 to 0.02 A/W.

引用

页数：3

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