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Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature
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作者:

Bhattacharya, P
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Su, XH
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机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

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Ariyawansa, G
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机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Perera, AGU
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机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
机构:
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
基金:
美国国家科学基金会;
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D O I:
10.1063/1.1923766
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
We report high-temperature (240-300 K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at,6 m m and 17 m m. The extremely low dark current density of 1.55 A/ cm(2) at 300 K for 1 V bias is made possible by the tunnel filter. For the 17 m m absorption, the measured peak responsivity is 0.16 A/ W (300 K) for a bias of 2 V and the specific detectivity D* is 1.5 x 10(7) cm Hz(1/2)/ W (280 K) for a bias of 1 V. Excellent performance characteristics are also measured for the 6 m m photoresponse. (c) 2005 American Institute of Physics.
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[1]
High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity
[J].
Chakrabarti, S
;
Stiff-Roberts, AD
;
Bhattacharya, P
;
Gunapala, S
;
Bandara, S
;
Rafol, SB
;
Kennerly, SW
.
IEEE PHOTONICS TECHNOLOGY LETTERS,
2004, 16 (05)
:1361-1363

论文数: 引用数:
h-index:
机构:

Stiff-Roberts, AD
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Bhattacharya, P
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Gunapala, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Bandara, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Rafol, SB
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Kennerly, SW
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2]
High responsivity AlAs/InAs/GaAs superlattice quantum dot infrared photodetector
[J].
Chakrabarti, S
;
Stiff-Roberts, AD
;
Bhattacharya, PB
;
Kennerly, SW
.
ELECTRONICS LETTERS,
2004, 40 (03)
:197-198

论文数: 引用数:
h-index:
机构:

Stiff-Roberts, AD
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Bhattacharya, PB
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Kennerly, SW
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[3]
Strain distribution and electronic spectra of InAs/GaAs self-assembled dots: An eight-band study
[J].
Jiang, HT
;
Singh, J
.
PHYSICAL REVIEW B,
1997, 56 (08)
:4696-4701

Jiang, HT
论文数: 0 引用数: 0
h-index: 0
机构: Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor

Singh, J
论文数: 0 引用数: 0
h-index: 0
机构: Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor
[4]
In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K
[J].
Jiang, L
;
Li, SS
;
Yeh, NT
;
Chyi, JI
;
Ross, CE
;
Jones, KS
.
APPLIED PHYSICS LETTERS,
2003, 82 (12)
:1986-1988

Jiang, L
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Li, SS
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Yeh, NT
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Chyi, JI
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Ross, CE
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

Jones, KS
论文数: 0 引用数: 0
h-index: 0
机构: Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
[5]
High detectivity InAs quantum dot infrared photodetectors
[J].
Kim, ET
;
Madhukar, A
;
Ye, ZM
;
Campbell, JC
.
APPLIED PHYSICS LETTERS,
2004, 84 (17)
:3277-3279

Kim, ET
论文数: 0 引用数: 0
h-index: 0
机构:
Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA

Madhukar, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA

Ye, ZM
论文数: 0 引用数: 0
h-index: 0
机构: Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA

Campbell, JC
论文数: 0 引用数: 0
h-index: 0
机构: Univ So Calif, Nanostruct Mat & Devices Lab, Dept Mat Sci, Los Angeles, CA 90089 USA
[6]
Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors
[J].
Kochman, B
;
Stiff-Roberts, AD
;
Chakrabarti, S
;
Phillips, JD
;
Krishna, S
;
Singh, J
;
Bhattacharya, P
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
2003, 39 (03)
:459-467

Kochman, B
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Stiff-Roberts, AD
论文数: 0 引用数: 0
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机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

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机构:

Phillips, JD
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Krishna, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Singh, J
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Bhattacharya, P
论文数: 0 引用数: 0
h-index: 0
机构: Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[7]
Three-color (λp1∼3.8 μm, λp2∼8.5 μm, and λp3∼23.2 μm) InAs/InGaAs quantum-dots-in-a-well detector
[J].
Krishna, S
;
Raghavan, S
;
von Winckel, G
;
Stintz, A
;
Ariyawansa, G
;
Matsik, SG
;
Perera, AGU
.
APPLIED PHYSICS LETTERS,
2003, 83 (14)
:2745-2747

Krishna, S
论文数: 0 引用数: 0
h-index: 0
机构:
Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Raghavan, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

von Winckel, G
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Stintz, A
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Ariyawansa, G
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Matsik, SG
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA

Perera, AGU
论文数: 0 引用数: 0
h-index: 0
机构: Univ New Mexico, Dept EECE, Ctr High Technol Mat, Albuquerque, NM 87106 USA
[8]
Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectors
[J].
Maimon, S
;
Finkman, E
;
Bahir, G
;
Schacham, SE
;
Garcia, JM
;
Petroff, PM
.
APPLIED PHYSICS LETTERS,
1998, 73 (14)
:2003-2005

Maimon, S
论文数: 0 引用数: 0
h-index: 0
机构:
Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

Finkman, E
论文数: 0 引用数: 0
h-index: 0
机构: Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

Bahir, G
论文数: 0 引用数: 0
h-index: 0
机构: Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

Schacham, SE
论文数: 0 引用数: 0
h-index: 0
机构: Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

Garcia, JM
论文数: 0 引用数: 0
h-index: 0
机构: Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel

Petroff, PM
论文数: 0 引用数: 0
h-index: 0
机构: Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
[9]
Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors
[J].
Pan, D
;
Towe, E
;
Kennerly, S
.
APPLIED PHYSICS LETTERS,
1998, 73 (14)
:1937-1939

Pan, D
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

Towe, E
论文数: 0 引用数: 0
h-index: 0
机构: Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA

Kennerly, S
论文数: 0 引用数: 0
h-index: 0
机构: Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA
[10]
Far-infrared photoconductivity in self-organized InAs quantum dots
[J].
Phillips, J
;
Kamath, K
;
Bhattacharya, P
.
APPLIED PHYSICS LETTERS,
1998, 72 (16)
:2020-2022

Phillips, J
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Kamath, K
论文数: 0 引用数: 0
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Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

Bhattacharya, P
论文数: 0 引用数: 0
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机构:
Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA