Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature

被引:142
作者
Bhattacharya, P [1 ]
Su, XH
Chakrabarti, S
Ariyawansa, G
Perera, AGU
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
[2] Georgia State Univ, Dept Phys & Astron, Atlanta, GA 30303 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.1923766
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report high-temperature (240-300 K) operation of a tunneling quantum-dot infrared photodetector. The device displays two-color characteristics with photoresponse peaks at,6 m m and 17 m m. The extremely low dark current density of 1.55 A/ cm(2) at 300 K for 1 V bias is made possible by the tunnel filter. For the 17 m m absorption, the measured peak responsivity is 0.16 A/ W (300 K) for a bias of 2 V and the specific detectivity D* is 1.5 x 10(7) cm Hz(1/2)/ W (280 K) for a bias of 1 V. Excellent performance characteristics are also measured for the 6 m m photoresponse. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
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