Highly a-axis-oriented Nb-doped Pb(TixZr1-x)O3 thin films grown by sol-gel technique for uncooled infrared dectors

被引：39

作者：

Han, H ^{[1
]}

Song, XY

Zhong, J

Kotru, S

Padmini, P

Pandey, RK

机构：

[1] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA

[2] Univ Alabama, Dept Elect & Comp Engn, Lab Elect Mat & Device Technol, Tuscaloosa, AL 35487 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 22期

关键词：

D O I：

10.1063/1.1825062

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pb(Nb0.02Zr0.2Ti0.8)O-3 thin films with thickness of 900 nm were spincoated on platinized silicon substrate using the sol-gel method. X-ray diffraction and field emission scanning electron microscopy show that the films are highly a-axis-oriented with columnar structure. A large remnant polarization (P-r(+)) similar to92.2 muC/cm(-2) was observed for as-grown films. The coercive field (E-c(+)) for these films was 159.3 kV/cm. Good pyroelectric properties are obtained as a result of large remnant and spontaneous polarization and their strong temperature dependence. The pyroelectric coefficient and figure of merit at room temperature (22degreesC) are 10.8x10(-4) C m(-2) K-1 and 2.34x10(-5) Pa-1/2, respectively. (C) 2004 American Institute of Physics.

引用

页码：5310 / 5312

页数：3

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