Room temperature chemical vapor deposition of c-axis ZnO

被引：104

作者：

Barnes, TM ^{[1
]}

Leaf, J ^{[1
]}

Fry, C ^{[1
]}

Wolden, CA ^{[1
]}

机构：

[1] Colorado Sch Mines, Dept Chem Engn, Golden, CO 80401 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2005年 / 274卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

X-ray diffraction; metalorganic chemical vapor deposition; oxides; zinc compounds; semiconducting II-VI materials;

D O I：

10.1016/j.jcrysgro.2004.10.015

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Highly (0 0 2) oriented ZnO films have been deposited at temperatures between 25 and 230degreesC by high-vacuum plasma-assisted chemical vapor deposition (HVP-CVD) on glass and silicon substrates. The HVP-CVD process was found to be weakly activated with an apparent activation energy of similar to 0.1eV, allowing room temperature synthesis. Films deposited on both substrates displayed a preferential c-axis texture over the entire temperature range. Films grown on glass demonstrated high optical transparency throughout the visible and near infrared. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：412 / 417

页数：6

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