Fabrication of a silicon-vacuum field-emission microdiode with a moving anode

被引:4
作者
Bruschi, P [1 ]
Diligenti, A [1 ]
Iani, F [1 ]
Nannini, A [1 ]
Piotto, M [1 ]
机构
[1] Univ Pisa, Dipt Ingn Informaz Elettron Informtat Telecommun, I-56126 Pisa, Italy
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期
关键词
D O I
10.1116/1.589877
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A vacuum microdiode with a moving anode was fabricated by means of a new process requiring only two mask levels and only one critical etching step. The cathode, with a pyramidal shape, was made by anisotropically etching p silicon through a mask formed by the anode itself, which, at the end of the process, consists of a SiO2 suspended membrane supporting an Al layer. The process is compatible with standard complementary metal-oxide-semiconductor technology. I-V characteristics were measured under vacuum verifying also that the diode current is sensitive to visible light irradiation and to changes of the anode-to-cathode distance. A minimum anode-cathode distance of about 5000 Angstrom was obtained. (C) 1998 American Vacuum Society. [S0734-211X(98)03902-X].
引用
收藏
页码:665 / 669
页数:5
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