Isolation process dependence of channel mobility in thin-film SOI devices

被引：17

作者：

Huang, CL ^{[1
]}

Soleimani, H ^{[1
]}

Grula, G ^{[1
]}

Arora, ND ^{[1
]}

Antoniadis, D ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

IEEE ELECTRON DEVICE LETTERS | 1996年 / 17卷 / 06期

关键词：

D O I：

10.1109/55.496461

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Degradation of NMOS and enhancement of PMOS I-V characteristics are found to be dependent on specific isolation processes in thin-film SOI devices, These variations are due to mobility decrease in NMOS and increase In PMOS, which can be attributed to the isolation-process-related compressive strain of the silicon film, Magnitudes of mobility variation as high as 40% are observed in the affected SOI devices.

引用

页码：291 / 293

页数：3

共 7 条

[1]

APPELS JA, 1970, LOCAL OXIDATION SILI, P118

[2] A NEW TECHNIQUE FOR MEASURING MOSFET INVERSION LAYER MOBILITY [J].