Low temperature VUV-assisted oxidation of Ge

被引：15

作者：

Craciun, V

Hutton, B

Williams, DE

Boyd, IW

机构：

[1] Univ London Univ Coll, London WC1E 7JE, England

[2] Univ London Birkbeck Coll, Dept Chem, London WC1H 0PP, England

[3] UCL, Dept Chem, London, England

[4] NILPRD, Laser Dept, Bucharest V, Romania

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 01期

关键词：

D O I：

10.1049/el:19980072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Direct photo-oxidation of germanium at temperatures < 400 degrees C using vacuum ultraviolet (VUV) radiation from an excimer lamp has been investigated The oxidation rate of 0.1 nm/min is significantly faster than conventional thermal oxidation. Single wavelength ellipsometry, Fourier transform infrared spectroscopy, and X-ray photoelectron spectroscopy measurements indicate that the grown layers are stoichiometric GeO(2).

引用

页码：71 / 72

页数：2

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