Vacancy defect and defect cluster energetics in ion-implanted ZnO

被引：124

作者：

Dong, Yufeng ^{[1
]}

Tuomisto, F. ^{[2
]}

Svensson, B. G. ^{[3
]}

Kuznetsov, A. Yu. ^{[3
]}

Brillson, Leonard J. ^{[1
,4
,5
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Helsinki Univ Technol, Dept Appl Phys, Helsinki 02015, Tkk, Finland

[3] Univ Oslo, Dept Phys, N-0316 Oslo, Norway

[4] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[5] Ohio State Univ, Ctr Mat Res, Columbus, OH 43210 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 08期

基金：

美国国家科学基金会; 芬兰科学院;

关键词：

PROGRESS; DEVICES; OXYGEN; FILMS;

D O I：

10.1103/PhysRevB.81.081201

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have used depth-resolved cathodoluminescence, positron annihilation, and surface photovoltage spectroscopies to determine the energy levels of Zn vacancies and vacancy clusters in bulk ZnO crystals. Doppler broadening-measured transformation of Zn vacancies to vacancy clusters with annealing shifts defect energies significantly lower in the ZnO band gap. Zn and corresponding O vacancy-related depth distributions provide a consistent explanation of depth-dependent resistivity and carrier-concentration changes induced by ion implantation.

引用

页数：4