学术探索
学术期刊
新闻热点
数据分析
智能评审

Time resolved microphotoluminescence studies of single InP nanowires grown by low pressure metal organic chemical vapor deposition

被引：21
作者：
Reitzenstein, S.
Muench, S.
Hofmann, C.
Forchel, A.
Crankshaw, S.
Chuang, L. C.
Moewe, M.
Chang-Hasnain, C.
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Univ Calif Berkeley, Appl Sci & Technol Grp, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1063/1.2776358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The authors report optical studies of InP nanowires (NWs) grown by metal organic chemical vapor deposition. By means of low temperature microphotoluminescence experiments, the authors determined the optical properties of as-grown NWs. The emission of individual NWs is characterized by small linewidths as low as 2.3 meV. Blueshifts of the NW emission energy between 25 and 56 meV with respect to bulk InP are related to radial carrier confinement in nanowires with diameters between 15 and 50 nm. Time resolved investigations reveal a low surface recombination velocity of 6x10(2) cm/s and indicate thermally activated nonradiative surface recombination above approximately 20 K. (c) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 18 条
[1]   Critical diameter for III-V nanowires grown on lattice-mismatched substrates [J].
Chuang, Linus C. ;
Moewe, Michael ;
Chase, Chris ;
Kobayashi, Nobuhiko P. ;
Chang-Hasnain, Connie ;
Crankshaw, Shanna .
APPLIED PHYSICS LETTERS, 2007, 90 (04)
[2]   Synthesis and optical properties of gallium arsenide nanowires [J].
Duan, XF ;
Wang, JF ;
Lieber, CM .
APPLIED PHYSICS LETTERS, 2000, 76 (09) :1116-1118
[3]   Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices [J].
Duan, XF ;
Huang, Y ;
Cui, Y ;
Wang, JF ;
Lieber, CM .
NATURE, 2001, 409 (6816) :66-69
[4]   Semiconductor nanowire laser and nanowire waveguide electro-optic modulators [J].
Greytak, AB ;
Barrelet, CJ ;
Li, Y ;
Lieber, CM .
APPLIED PHYSICS LETTERS, 2005, 87 (15) :1-3
[5]   Size-dependent photoluminescence from single indium phosphide nanowires [J].
Gudiksen, MS ;
Wang, JF ;
Lieber, CM .
JOURNAL OF PHYSICAL CHEMISTRY B, 2002, 106 (16) :4036-4039
[6]   Logic gates and computation from assembled nanowire building blocks [J].
Huang, Y ;
Duan, XF ;
Cui, Y ;
Lauhon, LJ ;
Kim, KH ;
Lieber, CM .
SCIENCE, 2001, 294 (5545) :1313-1317
[7]   TIME-RESOLVED PHOTOLUMINESCENCE OF UNDOPED INP [J].
KEYES, BM ;
DUNLAVY, DJ ;
AHRENKIEL, RK ;
SHAW, G ;
SUMMERS, GP ;
TZAFARAS, N ;
LENTZ, C .
JOURNAL OF APPLIED PHYSICS, 1994, 75 (08) :4249-4251
[8]   Enhanced luminescence from catalyst-free grown InP nanowires [J].
Mattila, M. ;
Hakkarainen, T. ;
Lipsanen, H. ;
Jiang, H. ;
Kauppinen, E. I. .
APPLIED PHYSICS LETTERS, 2007, 90 (03)
[9]   Crystal-structure-dependent photoluminescence from InP nanowires [J].
Mattila, M ;
Hakkarainen, T ;
Mulot, M ;
Lipsanen, H .
NANOTECHNOLOGY, 2006, 17 (06) :1580-1583
[10]   TIME-RESOLVED INVESTIGATIONS OF SIDEWALL RECOMBINATION IN DRY-ETCHED GAAS WIRES [J].
MAYER, G ;
MAILE, BE ;
GERMANN, R ;
FORCHEL, A ;
GRAMBOW, P ;
MEIER, HP .
APPLIED PHYSICS LETTERS, 1990, 56 (20) :2016-2018
12