Structure of a passivated Ge surface prepared from aqueous solution

被引：40

作者：

Lyman, PF

Sakata, O

Marasco, DL

Lee, TL

Breneman, KD

Keane, DT

Bedzyk, MJ ^{[1
]}

机构：

[1] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA

[3] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA

[4] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

SURFACE SCIENCE | 2000年 / 462卷 / 1-3期

基金：

英国医学研究理事会; 美国国家科学基金会;

关键词：

chalcogens; chemisorption; compound formation; crystalline-amorphous interfaces; germanium; surface chemical reaction; surface structure; morphology; roughness; and topography; x-ray standing waves;

D O I：

10.1016/S0039-6028(00)00508-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The structure of a passivating sulfide layer on Ge(001) was studied using X-ray standing waves and X-ray fluorescence. The sulfide layer was formed by reacting clean Ge substrates in (NH4)(2)S solutions of various concentrations at 80 degrees C. For each treatment, a sulfide layer containing approximately two to three monolayers (ML) of S was formed on the surface, and an ordered structure was found at the interface that contained approximately 0.4 ML of S. Our results suggest the rapid formation of a glassy GeSx layer containing 1.5-2.5 ML S residing atop a partially ordered interfacial layer of bridge-bonded S. The passivating reaction appears to be self-limited to 2-3 ML at this reaction temperature. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：L594 / L598

页数：5

共 20 条

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