A monolithically integrated InGaAs-InP p-i-n/JFET focal plane array

被引：5

作者：

Kim, DS

Forrest, SR

Lange, MJ

Olsen, GH

Kosonocky, W

机构：

[1] SENSORS UNLTD,PRINCETON,NJ 08540

[2] NEW JERSEY INST TECHNOL,DEPT ELECT & COMP ENGN,NEWARK,NJ 07102

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1996年 / 8卷 / 04期

关键词：

D O I：

10.1109/68.491228

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a monolithic InGaAs-InP focal plane array for near-infrared imaging, The array consists of an InGaAs p-i-n diode as a photodetector integrated with an InP junction field effect transistor (JFET) as a switching element for each pixel, in order to minimize the drain and gate leakage to achieve high-detection sensitivity, a novel ''p-encapsulation'' JFET was employed. Arrays as large as 16 x 16 were fabricated, consisting of 528 devices integrated into a single array with >99% individual device yield. This array represents significant progress in InP-based materials and integration technologies.

引用

页码：566 / 568

页数：3

共 8 条

[1] LOCALLY ION-IMPLANTED JFET IN AN INGAAS/INP P-I-N PHOTODIODE LAYER STRUCTURE FOR A MONOLITHICALLY PLANAR INTEGRATED RECEIVER OEIC [J].