A MONOLITHICALLY INTEGRATED IN0.53 GA0.47 AS OPTICAL RECEIVER WITH VOLTAGE-TUNABLE TRANSIMPEDANCE

被引：9

作者：

LO, DCW ^{[1
]}

CHUNG, YK ^{[1
]}

FORREST, SR ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.84477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the fabrication and performance of the first monolithically integrated In0.53Ga0.47As receiver with voltage-tunable transimpedance. In this receiver, a SiN(x) passivated p-i-n diode is integrated with an In0.53Ga0.47As transimpedance amplifier using multiple-etched steps to assist lithography and step coverage of the interconnection metallization. The p-i-n diode has an external quantum efficiency of 82% at a wavelength of 1.3-mu-m and -5 V bias. By adjusting the gate bias of a narrow-gate feedback transistor, the receiver has a tunable transimpedance of 19-36 k-OMEGA, responsivity of 17-30 kV/W, and unequalized bandwidth of 90-130 MHz.

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收藏

页码：757 / 760

页数：4

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