MONOLITHICALLY INTEGRATED RECEIVER FRONT END - IN0.53GA0.47AS P-I-N AMPLIFIER

被引：12

作者：

CHENG, CL

CHANG, RPH

TELL, B

PARKER, SMZ

OTA, Y

VELLACOLEIRO, GP

MILLER, RC

ZILKO, JL

KASPER, BL

BROWNGOEBELER, KF

MATTERA, VD

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

[2] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 09期

关键词：

D O I：

10.1109/16.2576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1439 / 1444

页数：6

共 14 条

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[7] GROWTH OF FE-DOPED SEMI-INSULATING INP BY MOCVD [J].

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[8] HIGH-SPEED INP/GA0.47IN0.53AS SUPERLATTICE AVALANCHE PHOTODIODES WITH VERY LOW BACKGROUND DOPING GROWN BY CONTINUOUS TRICHLORIDE VAPOR-PHASE EPITAXY [J].

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[9] CLOSE-CONTACT ANNEALING OF ION-IMPLANTED GAAS AND INP [J].

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[10]

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