Epitaxial lift-off process for GaAs solar cell on Si substrate

被引：12

作者：

Taguchi, H

Soga, T

Jimbo, T

机构：

[1] Nagoya Inst Technol, Dept Environm Technol & Urban Planning, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Lecip Corp, Itonuki 5010401, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 85卷 / 01期

关键词：

GaAs on Si; bonding; epitaxial lift-off;

D O I：

10.1016/j.solmat.2004.04.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This research has established the process to transplant GaAs solar cells from GaAs substrate to Si substrate without degrading the conversion efficiency. The conversion efficiency of GaAs solar cell bonded to Si substrate using epitaxial lift-off process is almost the same as that grown on GaAs substrate and is superior to that grown on Si substrate by heteroepitaxy. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：85 / 89

页数：5

共 6 条

[1] GROWTH OF SINGLE DOMAIN GAAS LAYER ON (100)-ORIENTED SI SUBSTRATE BY MOCVD [J].