The effect of isopropyl alcohol adsorption on the electrical characteristics of thin oxide

The effect of isopropyl alcohol (IPA) adsorption on the electrical Characteristics of thin oxide has been investigated. Metaloxide-semiconductor(MOS) capacitors were fabricated on Si substrate after IPA was intentionally adsorbed on the substrate surfaces. The leakage current was raised in the low electric field region for the 5-nm-thick thin oxide due to increased TPA adsorption, but the leakage current was not affected in the 8- and 10-nm-thick oxides. Using X-ray photoelectron spectroscopy, we found that the heat treatment creates C-SI bonds in the oxide due to organic adsorbates including IPA. These bonds appear likely to cause weak points or prevent uniform oxidation. A pre-annealing treatment was found to be effective in suppressing the formation of the C-Si bonds.