Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin films

被引：205

作者：

Chen, Min-Chen ^{[1
]}

Chang, Ting-Chang ^{[1
,2
]}

Tsai, Chih-Tsung ^{[1
]}

Huang, Sheng-Yao ^{[1
]}

Chen, Shih-Ching ^{[1
]}

Hu, Chih-Wei ^{[3
,4
]}

Sze, Simon M. ^{[3
,4
]}

Tsai, Ming-Jinn ^{[1
,5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[3] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[4] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

[5] Elect & Optoelect Res Labs, Ind Technol Res Inst, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

electric resistance; electrochemical electrodes; gallium compounds; indium compounds; MIS structures; platinum; point contacts; random-access storage; semiconductor storage; semiconductor thin films; titanium; titanium compounds; zinc compounds;

D O I：

10.1063/1.3456379

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The InGaZnO taken as switching layer in resistive nonvolatile memory is proposed in this paper. The memory cells composed of Ti/InGaZnO/TiN reveal the bipolar switching behavior that keeps stable resistance ratio of 10(2) with switching responses over 100 cycles. The resistance switching is ascribed to the formation/disruption of conducting filaments upon electrochemical reaction near/at the bias-applied electrode. The influence of electrode material on resistance switching is investigated through Pt/InGaZnO/TiN devices, which perform the unipolar and bipolar behavior as applying bias on Pt and TiN electrode, respectively. Experimental results demonstrate that the switching behavior is selective by the electrode. (C) 2010 American Institute of Physics. [doi:10.1063/1.3456379]

引用

页数：3

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