High speed resistive switching in Pt/TiO2/TiN film for nonvolatile memory application

被引：247

作者：

Yoshida, Chikako ^{[1
]}

Tsunoda, Kohji ^{[1
]}

Noshiro, Hideyuki ^{[1
]}

Sugiyama, Yoshihiro ^{[1
]}

机构：

[1] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期

关键词：

Thin films;

D O I：

10.1063/1.2818691

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated and investigated the bipolar resistive switching characteristics of Pt/rutile-TiO2/TiN devices for resistance memory applications. Data writing for five-level resistance states has been demonstrated by varying the amplitude of 5 ns voltage pulses. In addition, data retention of more than 256 h at 85 degrees C and an excellent endurance of over 2x10(6) cycles have been confirmed. These results indicate that Pt/TiO2/TiN devices have a potential for nonvolatile multiple-valued memory devices. (C) 2007 American Institute of Physics.

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页数：3

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