Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

被引：929

作者：

Yang, Yu Chao ^{[1
]}

Pan, Feng ^{[1
]}

Liu, Qi ^{[2
]}

Liu, Ming ^{[2
]}

Zeng, Fei ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mat Sci & Engn, Adv Mat Lab, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Lab Nanofabricat & Novel Devices Integrated Techn, Beijing 100029, Peoples R China

来源：

NANO LETTERS | 2009年 / 9卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ZNO FILMS; RESISTANCE; DEVICES;

D O I：

10.1021/nl900006g

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

Through a simple industrialized technique which was completely fulfilled at room temperature, we have developed a kind of promising nonvolatile resistive switching memory consisting of Ag/ZnO:Mn/Pt with ultrafast programming speed of 5 ns, an ultrahigh R-OFF/R-ON ratio of 10(7), long retention time of more than 10(7) s, good endurance, and high reliability at elevated temperatures. Furthermore, we have successfully captured clear visualization of nanoscale Ag bridges penetrating through the storage medium, which could account for the high conductivity in the ON-state device. A model concerning redox reaction mediated formation and rupture of Ag bridges is therefore suggested to explain the memory effect. The Ag/ZnO:Mn/Pt device represents an ultrafast and highly scalable (down to sub-100-nm range) memory element for developing next generation nonvolatile memories.

引用

页码：1636 / 1643

页数：8

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