Semiconductor thickness effects in the double-gate SOI MOSFET

被引：76

作者：

Majkusiak, B ^{[1
]}

Janik, T ^{[1
]}

Walczak, J ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 05期

关键词：

modeling; MOSFET's; quantization; semiconductor device modeling; silicon-on-insulator technology;

D O I：

10.1109/16.669563

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Influence of the semiconductor film thickness in the double-gate silicon-on-insulator (SOI) MOSFET on the electron concentration distribution, electron charge density, threshold voltage, electron effective mobility, and drain current is theoretically analyzed., The consideration of the semiconductor region is based on two descriptions: the "classical" model based on a solution to the Poisson equation and the "quantum" model based on a self-consistent solution to the Schrodinger and Poisson equation system. The electron effective mobility and the drain current are calculated with the use of the local mobility model.

引用

页码：1127 / 1134

页数：8

共 21 条

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KUZMICZ W, 1983, PHYSICS SEMICONDUCTO

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