A UNIFIED WIDE TEMPERATURE-RANGE MODEL FOR THE ENERGY-GAP, THE EFFECTIVE CARRIER MASS AND INTRINSIC CONCENTRATION IN SILICON

In this paper a new model for the intrinsic concentration in silicon is derived. It uses new wide temperature range models for the effective electron and hole masses which are based on fundamental computations found in literature. Furthermore the available models for the energy gap are reviewed. The intrinsic concentration is then computed out of these models and compared with measured data. It is shown that the model is in very close agreement with these data. The three models provide a unified consistent way for computing these physical values in device simulation.