Wide-range tunable semiconductor lasers using asymmetric dual quantum wells

被引：20

作者：

Lee, BL ^{[1
]}

Lin, CF

机构：

[1] Natl Taiwan Univ, Inst Electroopt Engn, Taipei 10764, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 03期

关键词：

amplified spontaneous emission (ASE) suppression ratio; asymmetric dual quantum wells; linear cavity; ring cavity; semiconductor laser amplifiers (SLA's); tunable semiconductor lasers;

D O I：

10.1109/68.661397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using asymmetric dual quantum wells for the laser material, the semiconductor lasers are broadly tunable, In a grating coupled ring cavity, the semiconductor laser is continuously tunable from 766 to 856 nm using a 400-mu m semiconductor laser amplifier in the cavity. This letter also demonstrates that the grating coupled ring cavity could well eliminate the amplified stimulated emission noise and about 40-dB amplified spontaneous emission (ASE) suppression ratio is obtained over the entire tuning range.

引用

页码：322 / 324

页数：3

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