Gain recovery of bulk semiconductor optical amplifiers

被引:107
作者
Girardin, F [1 ]
Guekos, G
Houbavlis, A
机构
[1] ETH Zurich, Inst Quantum Elect, CH-8093 Zurich, Switzerland
[2] Natl Tech Univ Athens, Photon Res Lab, GR-15773 Athens, Greece
关键词
optical communication; optical-signal processing; semiconductor device measurements; semiconductor optical amplifier; time-domain measurements;
D O I
10.1109/68.681483
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The gain recovery time of 1.55-mu m bulk semiconductor optical amplifiers (SOA's) with lengths from 500 to 1500 mu m has been measured with a continuous-wave (CW) probe in the time domain. It is shown to decrease with increasing length down to 60 ps for the longest SOA. This behavior is theoretically explained, A lower limit for the recovery time is observed and explained.
引用
收藏
页码:784 / 786
页数:3
相关论文
共 15 条
[1]   All-optical wavelength conversion by semiconductor optical amplifiers [J].
Durhuus, T ;
Mikkelsen, B ;
Joergensen, C ;
Danielsen, SL ;
Stubkjaer, KE .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1996, 14 (06) :942-954
[2]   GAIN RECOVERY-TIME OF TRAVELING-WAVE SEMICONDUCTOR OPTICAL AMPLIFIERS [J].
EISENSTEIN, G ;
TUCKER, RS ;
WIESENFELD, JM ;
HANSEN, PB ;
RAYBON, G ;
JOHNSON, BC ;
BRIDGES, TJ ;
STORZ, FG ;
BURRUS, CA .
APPLIED PHYSICS LETTERS, 1989, 54 (05) :454-456
[3]   Low-noise and very high-efficiency four-wave mixing in 1.5-mm-long semiconductor optical amplifiers [J].
Girardin, F ;
Eckner, J ;
Guekos, G ;
DallAra, R ;
Mecozzi, A ;
DOttavi, A ;
Martelli, F ;
Scotti, S ;
Spano, P .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (06) :746-748
[4]   SUBPICOSECOND GAIN AND INDEX NONLINEARITIES IN INGAASP DIODE-LASERS [J].
HALL, KL ;
LENZ, G ;
DARWISH, AM ;
IPPEN, EP .
OPTICS COMMUNICATIONS, 1994, 111 (5-6) :589-612
[5]   40Gbit/s all-optical wavelength conversion by semiconductor optical amplifiers [J].
Joergensen, C ;
Danielsen, SL ;
Vaa, M ;
Mikkelsen, B ;
Stubkjaer, KE ;
Doussiere, P ;
Pommerau, F ;
Goldstein, L ;
Goix, M .
ELECTRONICS LETTERS, 1996, 32 (04) :367-368
[6]   Effect of saturation caused by amplified spontaneous emission on semiconductor optical amplifier performance [J].
Liu, T ;
Obermann, K ;
Petermann, K ;
Girardin, F ;
Guekos, G .
ELECTRONICS LETTERS, 1997, 33 (24) :2042-2043
[7]   RECOVERY RATES IN SEMICONDUCTOR-LASER AMPLIFIERS - OPTICAL AND ELECTRICAL BIAS DEPENDENCIES [J].
MANNING, RJ ;
DAVIES, DAO ;
LUCEK, JK .
ELECTRONICS LETTERS, 1994, 30 (15) :1233-1235
[8]   40Gbit/s transmission over 406 km of NDSF using mid-span spectral inversion by four-wave-mixing in a 2mm long semiconductor optical amplifier [J].
Marcenac, DD ;
Nesset, D ;
Kelly, AE ;
Brierley, M ;
Ellis, AD ;
Moodie, DG ;
Ford, CW .
ELECTRONICS LETTERS, 1997, 33 (10) :879-880
[9]   BANDWIDTH ENHANCEMENT OF WAVELENGTH CONVERSION VIA CROSS-GAIN MODULATION BY SEMICONDUCTOR OPTICAL AMPLIFIER CASCADE [J].
MARCENAC, DD ;
KELLY, AE ;
NESSET, D ;
DAVIES, DAO .
ELECTRONICS LETTERS, 1995, 31 (17) :1442-1443
[10]   ANALYTICAL THEORY OF 4-WAVE-MIXING IN SEMICONDUCTOR AMPLIFIERS [J].
MECOZZI, A .
OPTICS LETTERS, 1994, 19 (12) :892-894