High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

被引：117

作者：

Maeda, T ^{[1
]}

Ikeda, K

Nakaharai, S

Tezuka, T

Sugiyama, N

Moriyama, Y

Takagi, S

机构：

[1] Natl Inst Adv Ind Sci & Technol, Adv Semicond Res Ctr, MIRAI Project, Ibaraki 3058562, Japan

[2] Natl Inst Adv Ind Sci & Technol, Assoc Super Adv Elect Technol, MIRAI Project, Ibaraki 3058569, Japan

[3] Assoc Super Adv Elect Technol, MIRAI Project, Kawasaki, Kanagawa 2128582, Japan

来源：

IEEE ELECTRON DEVICE LETTERS | 2005年 / 26卷 / 02期

关键词：

Ge-on-insulator (GOI); germanide; MOSFETs; Schottky source/drain (S/D);

D O I：

10.1109/LED.2004.841442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate, for the first time, successful operation of Schottky-barrier source/drain (S/D) germanium-on-insulator (GOI) MOSFETs, where a buried oxide and a silicon substrate are used as a gate dielectric and a bottom gate electrode, respectively. Excellent performance of p-type MOSFETs using Pt germanide S/D is presented in the accumulation mode. The hole mobility enhancement of 50%similar to40% against the universal hole mobility of Si MOSFETs is obtained for the accumulated GOI channel with the SiO2-Ge interface.

引用

页码：102 / 104

页数：3

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