High-speed Schottky-barrier pMOSFET with fT=280 GHz

被引：83

作者：

Fritze, M ^{[1
]}

Chen, CL

Calawa, S

Yost, D

Wheeter, B

Wyatt, P

Keast, CL

Snyder, J

Larson, J

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

[2] Spinnaker Semicond, Eden Prairie, MN 55344 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 04期

关键词：

microwave MOSFET; Schottky-barrier; MOSFET; short-channel MOSFET;

D O I：

10.1109/LED.2004.826294

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-speed results on sub-30-nm gate length pMOSFETs with platinum silicide Schottky-barrier source and drain are reported. With inherently low series resistance and high drive current, these deeply scaled transistors are promising for high-speed analog applications. The fabrication process simplicity is compelling with no implants required. A sub-30-nm gate length pMOSFET exhibited a cutoff frequency of 280 GHz, which is the highest reported to date for a silicon MOS transistor. Off-state leakage current can be easily controlled by augmenting the Schottky barrier height with an optional blanket As implant. Using this approach, good digital performance was also demonstrated.

引用

页码：220 / 222

页数：3

共 11 条

[1]

Chang CY, 2001, 2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, P89, DOI 10.1109/VLSIT.2001.934961

[2] CMOS technology for MS/RF SoC [J].