A new process for depositing tungsten nitride thin films

被引：25

作者：

Lu, JP ^{[1
]}

Hsu, WY

Luttmer, JD

Magel, LK

Tsai, HL

机构：

[1] Texas Instruments Inc, Semicond Proc & Device Ctr, Dallas, TX 75243 USA

[2] Texas Instruments Inc, Component & Mat Res Ctr, Dallas, TX 75243 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1998年 / 145卷 / 02期

关键词：

D O I：

10.1149/1.1838267

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

A new process for depositing tungsten nitride (WNx) thin films is reported. It is based on plasma-enhanced chemical vapor deposition (PECVD) using WF6+N-2+H-2 chemistry. High purity films that are stable in air have been obtained using the PECVD process. Effects of process conditions on conformality, film purity, and morphology are examined.

引用

页码：L21 / L23

页数：3

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