The monolithic integration of a superluminescent diode with a power amplifier
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作者:
Du, GT
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Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R ChinaJilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Du, GT
[1
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Devane, G
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Devane, G
Stair, KA
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Stair, KA
Wu, SG
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Wu, SG
Chang, RPH
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Chang, RPH
Zhao, YS
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Zhao, YS
Sun, ZZ
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Sun, ZZ
Liu, Y
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Liu, Y
Jiang, XY
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Jiang, XY
Han, WH
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机构:Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
Han, WH
机构:
[1] Jilin Univ, State Key Lab Integrated Optoelect, Changchun 130023, Peoples R China
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
Monolithic integration of a superluminescent diode with a tapered semiconductor power amplifier is proposed, The basic operation of the integrated optical source is demonstrated under pulse conditions, Output power obtained by the integrated device is one to two orders of magnitude higher than the conventional superluminescent diode (SLD) devices.