Understanding ultrahigh doping: The case of boron in silicon

被引：43

作者：

Luo, X ^{[1
]}

Zhang, SB ^{[1
]}

Wei, SH ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.90.026103

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using first-principles calculations, we develop a theory for ultrahigh impurity doping in semiconductors. Our study of B in Si explains why boron solubility in epitaxial growth could exceed the solid solubility to reach the kinetic solubility, and, with adequate surface passivation, to reach even higher values. We further show that the partial ionization at high B concentration, C-B, observed by experiment is predominantly an electron chemical potential effect, not a boron clustering effect. Our calculated hole concentration over a wide C-B range is in reasonable agreement with experiments.

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页数：4

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