SiGe bulk crystal as a lattice-matched substrate to GaAs for solar cell applications

被引：15

作者：

Usami, N

Azuma, Y

Ujihara, T

Sazaki, G

Nakajima, K

Yakabe, Y

Kondo, T

Koh, S

Shiraki, Y

Zhang, B

Segawa, Y

Kodama, S

机构：

[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Fac Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

[3] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

[4] Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 9800845, Japan

[5] Fujitsu Labs Ltd, Atsugi, Kanagawa 2430197, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 22期

关键词：

D O I：

10.1063/1.1329639

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SiGe bulk crystal fabricated by a multicomponent zone-melting method was used as a substrate for epitaxial growth of GaAs. Compared with conventional GaAs/Ge heterostructure, the lattice mismatch of GaAs/Si0.022Ge0.978 was confirmed to be reduced by a decrease of the peak separation of (400) x-ray diffraction from the epitaxial GaAs layer and the substrate. Furthermore, the linewidth of the rocking curve of GaAs on SiGe was found to be narrower than that of GaAs on Ge. These results show that SiGe is promising material as an alternative substrate to Ge for realization of exactly lattice-matched GaAs/SiGe solar cells. (C) 2000 American Institute of Physics. [S0003-6951(00)01249-3].

引用

页码：3565 / 3567

页数：3

共 16 条

[1] Effect of growth parameters on the MOVPE of GaAs/Ge for solar cell applications [J].