Growth kinetics of a displacement field in hydrogen implanted single crystalline silicon

The growth of a displacement field in single crystal silicon resulting from high dose hydrogen implantation and subsequent heat treatments has been investigated by MeV He-4(+) Rutherford backscattering in channeling conditions, double crystal x-ray diffraction, and transmission electron microscopy. The results obtained in samples annealed for various times in the temperature range 220-350 degrees C have been explained in terms of a kinetic model which assumes the formation of clusters of hydrogen molecules. The growth of the displacement field is thermally activated with an activation energy of 0.50+/-0.05 eV, suggesting that the limiting process could be the release of hydrogen atoms bounded to defects created by ion implantation. (C) 1998 American Institute of Physics.