Hydrogenated amorphous silicon transverse junction solar cell

被引：3

作者：

Kroon, MA ^{[1
]}

van Swaaij, RACMM ^{[1
]}

Zeman, M ^{[1
]}

Kuznetsov, VI ^{[1
]}

Metselaar, JW ^{[1
]}

机构：

[1] Delft Univ Technol, Lab Elect Components Technol & Mat, DIMES, NL-2600 GB Delft, Netherlands

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 02期

关键词：

D O I：

10.1063/1.120687

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we introduce a new thin film solar cell design on amorphous silicon, called the transverse junction solar cell. In this concept, the p-i-n junction is formed perpendicular to the surface. With conventional deposition and silicon device processing techniques test cells have been made with a conversion efficiency up to 5.2% +/- 1.4% under standard AM1.5 illumination. (C) 1998 American Institute of Physics.

引用

页码：209 / 210

页数：2

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