The adsorption of orthocarborane on cobalt

被引：15

作者：

Bernard, L

Caruso, AN

Xu, B

Doudin, B

Dowben, PA ^{[1
]}

机构：

[1] Univ Nebraska, Dept Phys & Astron, Lincoln, NE 68588 USA

[2] Univ Nebraska, Ctr Mat Res & Anal, Behlen Lab Phys, Lincoln, NE 68588 USA

[3] Ecole Polytech Fed Lausanne, Dept Phys, CH-1015 Lausanne, Switzerland

来源：

THIN SOLID FILMS | 2003年 / 428卷 / 1-2期

关键词：

cobalt; adsorption; electron spectroscopy; tunnel junction barriers; boron carbide;

D O I：

10.1016/S0040-6090(02)01283-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The adsorption of closo-1,2 dicarbadodecaborane (orthocarborane) on evaporated cobalt thin films has been investigated by combined photoemission and inverse photoemission studies. The adsorption of these icosahedral molecules does not strongly perturb the electronic structure of the underlying cobalt. As was previously observed with adsorption on Cu(100), electron induced decomposition of adsorbed orthocarborane decreases the HOMO-LUMO gap. The X-ray photoemission spectra before and after orthocarborane adsorption confirm that the interface with cobalt is abrupt. These results suggest that chemical vapor deposition, via the decomposition of orthocarborane, may be an effective method for fabricating dielectric barrier layers, without utilizing oxides. This is of interest for spin electronics applications. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：253 / 256

页数：4

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