Cerium dioxide thin films prepared by chemical vapor deposition from cerium dipivaloylmethanate

被引：7

作者：

Maruyama, T ^{[1
]}

机构：

[1] Kyoto Univ, Fac Engn, Dept Chem Engn, Kyoto 6068501, Japan

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 19期

关键词：

D O I：

10.1023/A:1006714631969

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cerium dioxide (CeO2) has high refractive index, good transmission in the visible and near infrared region, good adhesion, and stability against abrasion, chemical attack, and high temperature. CeO2 films can be formed from cerium dipivaloylmethanate by low temperature chemical vapor deposition. Intermediate amorphous layers are formed in the preparation of epitaxial CeO2 layers on silicon crystal. An intermediate amorphous silicon oxide layer exists in between the CeO2 layers and silica substrate. Amorphous layer formation is the oxygen diffusion through CeO2 layers and successive oxidation of silicon at the interface.

引用

页码：1723 / 1725

页数：3

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