Visible and IR photoluminescence of erbium doped porous silicon films

被引：4

作者：

Filippov, VV

Pershukevich, PP

Homenko, VS

Balucani, M

Bondarenko, VP

La Monica, S

Maiello, G

Masini, G

Ferrari, A

机构：

[1] Byelarussian Acad Sci, Inst Phys, Minsk 220072, BELARUS

[2] Byelarussian Acad Sci, Inst Phys, Acad Mol & Atom Phys, Minsk 220072, BELARUS

[3] Univ Roma La Sapienza, Dipartimento Ingn Elettron, INFM, Unita Roma, I-00184 Rome, Italy

[4] Bielorussian State Univ Informat & Elect, Minsk, BELARUS

[5] Terza Univ Roma, Dipartimento Ingn Elettron, I-00146 Rome, Italy

来源：

SOLID STATE PHENOMENA | 1997年 / 54卷

关键词：

porous silicon; erbium; IR photoluminescence;

D O I：

10.4028/www.scientific.net/SSP.54.94

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors doped with Er and Yb from their colloidal alcoholic solutions. One of the samples was annealed at 700 degrees C for 10 min, another was heat treated at 100 degrees C for 6h, After annealing, both exhibited room-temperature Er3+ photoluminescence which increased significantly under excitation at wavelengths corresponding to the absorption band of porous silicon. In addition, the sample containing the largest amount of Yb3+ revealed a strong Yb3+ photoluminescence at 985 nm.

引用

页码：94 / 98

页数：5

共 12 条

[1] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].