Hydrogen reduction of a RuO2 electrode prepared by DC reactive sputtering

被引:12
作者
Matsui, Y [1 ]
Hiratani, M [1 ]
Kimura, S [1 ]
机构
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
关键词
D O I
10.1023/A:1004894522975
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
RuO2 thin films deposited by reactive DC sputtering were heat-treated in a 0.3%-H-2 atmosphere at 200 degrees C in order to investigate the reduction property of RuO2. The films were selectively reduced (starting from the interface) because of insufficient oxidation. When the as-deposited RuO2/Si structure was hydrogen-reduced, the RuO2 film was broken into fragments because of poor mechanical strength. On the other hand, the RuO2 film heat-treated once in O-2 at 700 degrees C cracked into a star shape as a result of vapor generation and volume shrinkage. The star-shape cracking was still observed even when the RuO2 film was covered with a 90-nm-thick BST film. The mechanical strength and the adhesion of RuO2 were improved to some extent by post-oxidation at high temperatures. However, a way to prevent the morphological destruction could not be found because of the thermodynamic equilibrium during the hydrogen reduction process. (C) 2000 Kluwer Academic Publishers.
引用
收藏
页码:4093 / 4098
页数:6
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