A 3-V monolithic SiGe HBT power amplifier for dual-mode (CDMA/AMPS) cellular handset applications

被引：48

作者：

Tseng, PD ^{[1
]}

Zhang, LY ^{[1
]}

Gao, GB ^{[1
]}

Chang, MF ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2000年 / 35卷 / 09期

关键词：

dual-mode cellular handset; monolithic integration; power amplifier; SiGeHBT;

D O I：

10.1109/4.868045

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A dual-mode (CDMA/AMPS) power amplifier has been successfully implemented by using a monolithic SiGe/Si heterojunction bipolar transistor (HBT) foundry process for cellular handset (824-849 MHz) applications. The designed two-stage power amplifier satisfies both CDMA and AMPS requirements in output power, linearity, and efficiency. At V(cc) = 3 V, the power amplifier shows an excellent linearity (first ACPR < -44.1 dBc and second ACPR < -57.1 dBc) up to 28 dBm of output power for CDMA applications. Under the same bias condition, the power amplifier also meets AMPS handset requirements in output power (up to 31 dBm) and linearity (with second and third harmonic to fundamental ratios lower than -37 dBc and -55 dBc, respectively). At the maximum output power level, the worst power-added efficiencies (PAEs) are measured to be 36% for CDMA and 49% for AMPS operations. The power amplifier also tolerates severe output mismatch (VSWR >12:1) up to V(cc) = 4 V, with spurs measured to be < -22 dBc in CDMA outputs at two specific tuning angles, but with no spur in AMPS outputs at any tuning angle.

引用

页码：1338 / 1344

页数：7

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