Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GHz and fMax > 20 GHz

被引：103

作者：

Egard, M. ^{[1
]}

Johansson, S. ^{[1
]}

Johansson, A. -C ^{[2
]}

Persson, K. -M. ^{[1
]}

Dey, A. W. ^{[1
]}

Borg, B. M. ^{[1
]}

Thelander, C. ^{[1
,2
]}

Wernersson, L. -E. ^{[1
]}

Lind, E. ^{[1
,2
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

[2] Qumat Technol AB, S-22224 Lund, Sweden

来源：

NANO LETTERS | 2010年 / 10卷 / 03期

基金：

瑞典研究理事会;

关键词：

Nanowire; MOSFET; InAs; high-frequency characterization; vertical geometry; PERFORMANCE; MOSFET;

D O I：

10.1021/nl903125m

中图分类号：

O6 [化学];

学科分类号：

070301 [无机化学];

摘要：

In this letter we report on high-Frequency measurements on vertically standing III-V nanowire wrap-gate MOSFETs (metal-oxide-semiconductor field-effect transistors). The nanowire transistors are fabricated from InAs nanowires that are epitaxially grown on a semi-insulating InP substrate. All three terminals of the MOSFETs are defined by wrap around contacts. This makes it possible to perform high-frequency measurements on the vertical InAs MOSFETs. We present S-parameter measurements performed on a matrix consisting of 70 InAs nanowire MOSFETs, which have a gate length of about 100 nm. The highest unity current gain cutoff frequency, f(t), extracted from these measurements is 7.4 GHz and the maximurn frequency of oscillation, f(max), is higher than 20 GHz. This demonstrates that this is a Viable technique for fabricating high-frequency integrated circuits consisting of vertical nanowires.

引用

页码：809 / 812

页数：4

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