A simple and analytical parameter-extraction method of a microwave MOSFET

被引：117

作者：

Kwon, I ^{[1
]}

Je, M ^{[1
]}

Lee, K ^{[1
]}

Shin, H ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2002年 / 50卷 / 06期

关键词：

CMOS; modeling; parameter extraction; microwave; small-signal equivalent circuit;

D O I：

10.1109/TMTT.2002.1006411

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 [电气工程]; 0809 [电子科学与技术];

摘要：

A simple and accurate parameter-extraction method of a high-frequency small-signal MOSFET model including the substrate-related parameters and nonreciprocal capacitors is proposed. Direct extraction of each parameter using a linear regression approach is performed by Y-parameter analysis on the proposed equivalent circuit of the MOSFET for high-frequency operation. The extracted results are physically meaningful and good agreement has been obtained between the simulation results of the equivalent circuit and measured data without any optimization. Also, the extracted parameters, such as g(m) and g(ds), match very well with those obtained by de measurement.

引用

页码：1503 / 1509

页数：7

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