Optical anisotropy of Langmuir-Blodgett sapphyrin films

被引:26
作者
Di Natale, C
Goletti, C
Paolesse, R
Della Sala, F
Drago, M
Chiaradia, P
Lugli, P
D'Amico, A
机构
[1] Univ Roma Tor Vergata, Dipartimento Fis, I-00133 Rome, Italy
[2] Univ Roma Tor Vergata, Unita INFM, I-00133 Rome, Italy
[3] Univ Roma Tor Vergata, Dipartimento Ingn Elettron, I-00133 Rome, Italy
[4] Univ Roma Tor Vergata, Dipartimento Sci & Tecnol Chim, I-00133 Rome, Italy
关键词
D O I
10.1063/1.1324983
中图分类号
O59 [应用物理学];
学科分类号
摘要
The polarization dependence of the optical reflectivity for sapphyrin layers deposited by the Langmuir-Blodgett technique onto a gold substrate has been measured. The experimental results show that characteristic reflectance anisotropy spectroscopy (RAS) spectra are related to layers of different thicknesses. In order to interpret the measured spectral features, the anisotropy of the optical properties of the sapphyrin molecule has been evaluated by using a semi-empirical quantum chemistry approach. The results show clearly that the main RAS structures are related to the electronic properties of the sapphyrin molecules. In particular, two different regimes are observed. Below one (true) monolayer, the optical signal remains very low and structureless, in agreement with the sapphyrin molecules being stacked with their planes almost perpendicular to the substrate plane. Above one monolayer, instead, a strong RAS signal related to the Soret band develops, suggesting that sapphyrin molecules lay more parallel to the substrate surface, in an ordered fashion. (C) 2000 American Institute of Physics. [S0003-6951(00)00446-0].
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页码:3164 / 3166
页数:3
相关论文
共 19 条
[1]   OPTICAL-REFLECTANCE AND ELECTRON-DIFFRACTION STUDIES OF MOLECULAR-BEAM-EPITAXY GROWTH TRANSIENTS ON GAAS(001) [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1687-1690
[2]   REFLECTANCE DIFFERENCE STUDIES OF ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION GROWTH TRANSIENTS ON (001) GAAS [J].
ASPNES, DE ;
BHAT, R ;
COLAS, E ;
KERAMIDAS, VG ;
KOZA, MA ;
STUDNA, AA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03) :711-716
[3]   APPLICATION OF REFLECTANCE DIFFERENCE SPECTROSCOPY TO MOLECULAR-BEAM EPITAXY GROWTH OF GAAS AND ALAS [J].
ASPNES, DE ;
HARBISON, JP ;
STUDNA, AA ;
FLOREZ, LT .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1327-1332
[4]   FERMI-LEVEL MOVEMENT AT GAAS(001) SURFACES PASSIVATED WITH SODIUM SULFIDE SOLUTIONS [J].
BERKOVITS, VL ;
BESSOLOV, VN ;
LVOVA, TN ;
NOVIKOV, EB ;
SAFAROV, VI ;
KHASIEVA, RV ;
TSARENKOV, BV .
JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3707-3711
[5]   Differential-reflectance spectroscopy and reflectance-anisotropy spectroscopy on semiconductor surfaces [J].
Chiaradia, P ;
Del Sole, R .
SURFACE REVIEW AND LETTERS, 1999, 6 (3-4) :517-528
[6]   Adsorbate azimuthal orientation from reflectance anisotropy spectroscopy [J].
Frederick, BG ;
Power, JR ;
Cole, RJ ;
Perry, CC ;
Chen, Q ;
Haq, S ;
Bertrams, T ;
Richardson, NV ;
Weightman, P .
PHYSICAL REVIEW LETTERS, 1998, 80 (20) :4490-4493
[7]   Kelvin probe and scanning tunneling microscope characterization of Langmuir-Blodgett sapphyrin films [J].
Goletti, C ;
Sgarlata, A ;
Motta, N ;
Chiaradia, P ;
Paolesse, R ;
Angelaccio, A ;
Drago, M ;
Di Natale, C ;
D'Amico, A ;
Cocco, M ;
Troitsky, VI .
APPLIED PHYSICS LETTERS, 1999, 75 (09) :1237-1239
[8]   STUDY OF SURFACE-STATES ON CU(110) USING OPTICAL REFLECTANCE ANISOTROPY [J].
HOFMANN, P ;
ROSE, KC ;
FERNANDEZ, V ;
BRADSHAW, AM ;
RICHTER, W .
PHYSICAL REVIEW LETTERS, 1995, 75 (10) :2039-2042
[9]   Adsorption and desorption kinetics of CO on Cu(110) studied by optical differential reflectance [J].
Jin, XF ;
Mao, MY ;
Ko, S ;
Shen, YR .
PHYSICAL REVIEW B, 1996, 54 (11) :7701-7704
[10]  
JOHNSON PB, 1971, PHYS REV, V24, P417