Selective epitaxial growth Si resonant-cavity photodetector

被引：6

作者：

Neudeck, GW ^{[1
]}

Denton, J

Qi, J

Schaub, JD

Li, R

Campbell, JC

机构：

[1] Purdue Univ, W Lafayette, IN 47907 USA

[2] Univ Texas, Austin, TX 78712 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 01期

基金：

美国国家科学基金会;

关键词：

Si photodiodes;

D O I：

10.1109/68.651135

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An novel resonant-cavity Si photodiode was fabricated using a selective epitaxial growth process, The photodiode shows a bandwidth over 5 GHz, and a quantum efficiency over 65% at 700 mn, Compared to the previously reported Si resonant-cavity Si photodetectors, this photodiode process is more compatible with Si integrated circuit technology.

引用

页码：129 / 131

页数：3

共 9 条

[1] High-speed polysilicon resonant-cavity photodiode with SiO2-Si Bragg reflectors [J].