CRYSTAL SILICON FABRY-PEROT CAVITIES DEPOSITED WITH DICHLOROSILANE IN A REDUCED PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR FOR THERMAL SENSING

被引：2

作者：

CHAO, HC ^{[1
]}

NEUDECK, GW ^{[1
]}

机构：

[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47906

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 13期

关键词：

CHEMICAL VAPOR DEPOSITION; FABRY-PEROT RESONATORS; SILICON-ON-INSULATOR;

D O I：

10.1049/el:19950708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface-normal Fabry-Perot (FP)thermal sensor with embedded multiple QW dielectric mirrors, was fabricated and evaluated using a single crystal merged silicon epitaxial lateral overgrowth (MELO) technique. The sensitivity of the sensor has been improved owing to the higher finesse.

引用

收藏

页码：1101 / 1102

页数：2

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