POLYSILICON FABRY-PEROT CAVITIES DEPOSITED WITH DICHLOROSILANE IN A REDUCED PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR FOR THERMAL SENSING

被引：1

作者：

CHAO, HC

NEUDECK, GW

机构：

[1] School of Electrical Engineering, Purdue University West Lafayette

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 01期

关键词：

CHEMICAL VAPOR DEPOSITION; TEMPERATURE MEASUREMENT; SILICON;

D O I：

10.1049/el:19940050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermo-optical effect of a polysilicon Fabry-Perot thermal sensor, deposited in a reduced pressure pancake reactor using dichlorosilane, has been evaluated theoretically and experimentally. The polysilicon deposition rate was much faster than that deposited by the low pressure chemical vapour deposition (LPCVD) technique using silicon.

引用

页码：80 / 81

页数：2

共 7 条

[1] REFRACTIVE-INDEX OF GA1-XALXAS [J].