Photoluminescence vibrational spectroscopy of defects containing the light impurities carbon and oxygen in silicon

A brief report is made on the carbon and oxygen isotope structures of the local vibrational modes of the C-line and G-line luminescence systems created by radiation damage of Czochralski silicon with a high carbon concentration, together with a first time investigation of the local mode structures of the F-line and H-line luminescence systems created by subsequent annealing at 350 and 450 degrees C. A preliminary analysis shows that there is no carbon-carbon or carbon-oxygen bonding in any of these centres, and only very minor dynamic interaction between the different carbon and oxygen atoms exists. The presence of similar and, in some cases, almost identical local modes for the different centres suggests that parts of defect structures responsible for G-and C-line, F-and H-line and some other luminescence systems have similar atomic configurations. It is suggested that the F-line centre is created by the capture of a mobile version of the G-line centre by the C-line centre, and that the subsequent capturing of extra oxygen atom gives rise to the H-line centre.