Growth of polycrystalline tubular silicon carbide Yajima-type reaction at the vapor-solid interface

被引：11

作者：

Wang, Chia-Hsin

Lin, Huang-Kai

Ke, Tsung-Ying

Palathinkal, Thomas-Joseph

Tai, Nyan-Hwa

Lin, I-Nan

Lee, Chi-Young

Chiu, Hsin-Tien ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Appl Chem, Hsinchu 30050, Taiwan

[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan

[3] Natl Tsing Hua Univ, Ctr Nanotechnol Mat Sci & Microsyst, Hsinchu 30043, Taiwan

[4] Tamkang Univ, Dept Phys, Tamsui 25137, Taiwan

来源：

CHEMISTRY OF MATERIALS | 2007年 / 19卷 / 16期

关键词：

D O I：

10.1021/cm070925e

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/mu m with a current of 10 mu A/cm(2).

引用

收藏

页码：3956 / 3962

页数：7

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