Study of Mg associated levels in GaN

被引：3

作者：

Khan, MRH ^{[1
]}

Detchprohm, T

Nakayama, H

Hiramatsu, K

Sawaki, N

机构：

[1] Univ Chittagong, Dept Phys, Chittagong 4331, Bangladesh

[2] Nagoya Univ, Dept Elect, Chikusa Ku, Nagoya, Aichi 46401, Japan

来源：

SOLID STATE PHENOMENA | 1997年 / 55卷

关键词：

photoluminescence; donor-acceptor pair; quasi Fermi level;

D O I：

10.4028/www.scientific.net/SSP.55.218

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A photoluminescence (PL) study between 60K and 295K of Mg doped GaN epitaxial layers grown by organometralic vapour phase epitaxy (OMVPE) on Al2O3 substrates is reported. Mg doped GaN shows a very strong blue-purple band (2.755 eV to 3.351 eV) showing distinct peaks at 3.271 and 3.183 eV and a shoulder at 3.12 eV at 60 K. Time resolved spectra show that these levels exhibit donor-acceptor (D-h) pair recombination. Temperature dependence of these levels is complex and does not follow the change in band gap. These levels move toward the low energy side with increasing Mg concentration within the same purple-blue band. The transition is assumed to be between quasi Fermi level and Mg (acceptor) as wall as within the Mg-N-vacancy complex.

引用

页码：218 / 221

页数：4

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