Dependence of open-circuit voltage in hydrogenated protocrystalline silicon solar cells on carrier recombination in p/i interface and bulk regions

被引：42

作者：

Pearce, JM ^{[1
]}

Koval, RJ

Ferlauto, AS

Collins, RW

Wronski, CR

Yang, J

Guha, S

机构：

[1] Penn State Univ, Ctr Thin Film Devices, University Pk, PA 16801 USA

[2] United Solar Syst Corp, Troy, MI 48084 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1323550

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Contribution of carrier recombination from the p/i interface regions and the bulk to the dark current-voltage (J(D)-V) and short-circuit current-open-circuit voltage (J(sc)-V-oc) characteristics of hydrogenated amorphous-silicon (a-Si:H) p-i-n and n-i-p solar cells have been separated, identified, and quantified. Results are presented and discussed here which show that a maximum 1 sun V-oc for a given bulk material can be validly extrapolated from bulk dominated J(sc)-V-oc characteristics at low illumination intensities. (C) 2000 American Institute of Physics. [S0003-6951(00)01445-5].

引用

页码：3093 / 3095

页数：3

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