THE RELATION OF DARK AND ILLUMINATED DIODE PARAMETERS TO THE OPEN-CIRCUIT VOLTAGE OF AMORPHOUS-SILICON P-I-N SOLAR-CELLS

被引：30

作者：

HEGEDUS, SS ^{[1
]}

SALZMAN, N ^{[1
]}

FAGEN, E ^{[1
]}

机构：

[1] UNIV DELAWARE,NEWARK,DE 19716

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340414

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5126 / 5130

页数：5

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[9] A COMPARISON OF SINGLE-CARRIER AND DOUBLE-CARRIER INJECTION IN AMORPHOUS-SILICON ALLOYS [J].

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