High crystalline quality CeO2 buffer layers epitaxied on (1(1)under-bar-02) sapphire for YBa2Cu3O7 thin films

被引:41
作者
Castel, X
Guilloux-Viry, M [1 ]
Perrin, A
Lesueur, J
Lalu, F
机构
[1] Univ Rennes 1, LCSIM, UMR 6511, F-35042 Rennes, France
[2] CSNSM, F-91405 Orsay, France
关键词
YBa2Cu3O7 thin film; CeO2 buffer layer; (1 1 0 2)Al2O3 substrate; thin film growth; epitaxy; pulsed laser deposition;
D O I
10.1016/S0022-0248(97)00857-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
(0 0 1)CeO2 thin films and bilayer (0 0 1)YBa2Cu3O7/(0 0 1)CeO2 films grown in situ by pulsed laser deposition (PLD) on single crystal(1 (1) under bar 0 2) sapphire have been investigated. CeO2 buffer layers exhibit single crystal-like quality as proven by the full-width at half-maximum (FWHM) of the 0 0 2 rocking curve (Delta theta similar to 0.03 degrees) and the channeling minimum yield measured by baskscattering spectrometry (RBS) (chi(min)similar to 3%). Therefore, the YBa2Cu3O7/CeO2/Al2O3 heterostructures present sharp interfaces as shown by the observation of Laue oscillations on both CeO2 and YBa2Cu3O7 XRD patterns. In agreement with this crystalline perfection, YBa2Cu3O7 thin films present excellent and reproducible superconducting properties: T-c (R = 0) > 88.5 K, transition width similar to 0.5 K and microwave surface resistance R-s 0.5-2 m Omega at 10 GHz and 77 K. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:211 / 220
页数:10
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